Melting Point                   851 °C

Density                           5.700 g/cm3

Mohs Hardness                3-3.5

Parallelism                      ≤30 arc second

wavefront distortion        ≤ λ/4 @ 633 nm

Flatness                         ≥ λ/8 @ 633 nm

Surface quality               ≤ 10/5


AGSe2 AgGaSe2(AgGa(1x)InxSe2) crystals have band edges at 0.73 and 18 µm. Its useful transmission range (0.9–16 µm) and wide phase matching capability provide excellent potential for OPO applications when pumped by a variety of different lasers. Tuning within 2.5–12 µm has been obtained when pumping by Ho:YLF laser at 2.05 µm; as well as non-critical phase matching (NCPM) operation within 1.9–5.5 µm  when pumping at 1.4–1.55 µm. AgGaSe2 (AgGaSe) has been demonstrated to be an efficient frequency doubling crystal for infrared CO2 lasers radiation.


  • Generation second harmonics on CO and CO2 - lasers
  • Optical parametric oscilator
  • Different frequency generator to middle infrared regions up to 17 mkm.
  • Frequency mixing in the middle IR region

Basic properties

Crystal Structure


Cell Parameters 

a=5.992 Å, c=10.886 Å

Melting Point

851 °C


5.700 g/cm3

Mohs Hardness


Absorption Coefficient

<0.05 cm-1 @ 1.064 µm
<0.02 cm-1 @ 10.6 µm

Relative Dielectric Constant @ 25 MHz


Thermal Expansion Coefficient 

||C: -8.1 x 10-6 /°C
⊥C: +19.8 x 10-6 /°C

Thermal Conductivity 

1.0 W/M/°C


You can customise this product to your needs. If you do not find suitable specifications for your application please contact us for custom solution.