产品中心>Laser Crystals>Nd:YVO4
Density 4.22 g/cm2
Melting Point 1810 ± 25℃
Orientation a-cut crystalline direction (+/-5℃)
Wavefront distortion <λ/8 at 633nm
Surface quality better than 20/10 Scratch/Dig
Parallelism < 10 arc seconds
Perpendicularity < 5 arc minutes
Surface flatness <λ/10 at 632.8nm
Chamfer 0.15x45o
Nd:YVO4 is one of the most efficient laser host crystal currently existing for diode laser-pumped solid-state lasers. Nd:YVO4 is an excellent crystal for high power, stable and cost-effective diode pumped solid-state lasers. Nd:YVO4 can produce powerful and stable IR, green, blue lasers with the design of Nd:YVO4 and frequency doubling crystals. For the applications in which more compact design and the single-longitudinal-mode output are needed, Nd:YVO4 shows its particular advantages over other commonly used laser crystals.
Advantages of Nd:YVO4
• Low lasing threshold and high slope efficiency
• Large stimulated emission cross-section at lasing wavelength
• High absorption over a wide pumping wavelength bandwidth
• Optically uniaxial and large birefringence emits polarized laser
• Low dependency on pumping wavelength and tend to single mode output
Basic Properties |
|
Atomic Density |
~1.37x1020 atoms/cm2 |
Crystal Structure |
Zircon Tetragonal, space group D4h, a=b=7.118, c=6.293 |
Density |
4.22 g/cm2 |
Mohs Hardness |
Glass-like, 4.6 ~ 5 |
Thermal Expansion Coefficient |
αa=4.43x10-6/K,αc=11.37x10-6/K |
Melting Point |
1810 ± 25℃ |
Lasing Wavelengths |
914nm, 1064 nm, 1342 nm |
Thermal Optical Coefficient |
dna/dT=8.5x10-6/K, dnc/dT=3.0x10-6/K |
Stimulated Emission Cross-Section |
25.0x10-19 cm2 , @1064 nm |
Fluorescent Lifetime |
90 ms (about 50 ms for 2 atm% Nd doped) @ 808 nm |
Absorption Coefficient |
31.4 cm-1 @ 808 nm |
Absorption Length |
0.32 mm @ 808 nm |
Intrinsic Loss |
Less 0.1% cm-1 , @1064 nm |
Gain Bandwidth |
0.96 nm (257 GHz) @ 1064 nm |
Polarized Laser Emission |
parallel to optic axis (c-axis) |
Diode Pumped Optical to Optical Efficiency |
> 60% |
Sellmeier Equation (for pure YVO4 crystals) |
no2(λ) =3.77834+0.069736/(λ2 - 0.04724) - 0.0108133λ2 |
Technical Parameters |
|
Nd dopant concentration |
0.2 ~ 3 atm% |
Dopant tolerance |
within 10% of concentration |
Length |
0.02 ~ 20mm |
Coating specification |
AR @ 1064nm, R< 0.1% & HT @ 808nm, T>95% |
Orientation |
a-cut crystalline direction (+/-5℃) |
Dimensional tolerance |
+/-0.1mm(typical), High precision +/-0.005mm can be available upon request. |
Wavefront distortion |
<λ/8 at 633nm |
Surface quality |
better than 20/10 Scratch/Dig per MIL-O-1380A |
Parallelism |
< 10 arc seconds |
Perpendicularity |
< 5 arc minutes |
Surface flatness |
<λ/10 at 632.8nm |
Clear aperture |
Central 95% |
Chamfer |
0.15x45o |
Damage threshold |
over 15J/cm2 (rods without coating) over 700 MW/cm2 (coating) |
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