Laser Crystals_Product Center_Chengdu Xinyuan Huibo Photoelectric Technology Co., Ltd

Nd:YVO4 is one of the most efficient laser host crystal currently existing for diode laser-pumped solid-state lasers. Nd:YVO4 is an excellent crystal for high power, stable and cost-effective diode pumped solid-state lasers. Nd:YVO4 can produce powerful and stable IR, green, blue lasers with the design of Nd:YVO4 and frequency doubling crystals. For the applications in which more compact design and the single-longitudinal-mode output are needed, Nd:YVO4 shows its particular advantages over other commonly used laser crystals.

Advantages of Nd:YVO4

● Low lasing threshold and high slope efficiency

● Large stimulated emission cross-section at lasing wavelength

● High absorption over a wide pumping wavelength bandwidth

● Optically uniaxial and large birefringence emits polarized laser

● Low dependency on pumping wavelength and tend to single mode output

Basic Properties
Atomic Density	~1.37x1020 atoms/cm2
Crystal Structure	Zircon Tetragonal, space group D4h, a=b=7.118, c=6.293
Density	4.22 g/cm2
Mohs Hardness	Glass-like, 4.6 ~ 5
Thermal Expansion Coefficient	αa=4.43x10-6/K,αc=11.37x10-6/K
Melting Point	1810 ± 25℃
Lasing Wavelengths	914nm, 1064 nm, 1342 nm
Thermal Optical Coefficient	dna/dT=8.5x10-6/K, dnc/dT=3.0x10-6/K
Stimulated Emission Cross-Section	25.0x10-19 cm2 , @1064 nm
Fluorescent Lifetime	90 ms (about 50 ms for 2 atm% Nd doped) @ 808 nm
Absorption Coefficient	31.4 cm-1 @ 808 nm
Absorption Length	0.32 mm @ 808 nm
Intrinsic Loss	Less 0.1% cm-1 , @1064 nm
Gain Bandwidth	0.96 nm (257 GHz) @ 1064 nm
Polarized Laser Emission	parallel to optic axis (c-axis)
Diode Pumped Optical to Optical Efficiency	> 60%
Sellmeier Equation (for pure YVO4 crystals)	no2(λ) =3.77834+0.069736/(λ2 - 0.04724) - 0.0108133λ2
Sellmeier Equation (for pure YVO4 crystals)	no2(λ) =4.59905+0.110534/(λ2 - 0.04813) - 0.0122676λ2
Technical Parameters
Nd dopant concentration	0.2 ~ 3 atm%
Dopant tolerance	within 10% of concentration
Length	0.02 ~ 20mm
Coating specification	AR @ 1064nm, R< 0.1% & HT @ 808nm, T>95%
	HR @ 1064nm, R>99.8% & HT@ 808nm, T>9%
	HR @ 1064nm, R>99.8%, HR @ 532 nm, R>99% & HT @ 808 nm, T>95%
Orientation	a-cut crystalline direction (+/-5℃)
Dimensional tolerance	+/-0.1mm(typical), High precision +/-0.005mm can be available upon request.
Wavefront distortion	<λ/8 at 633nm
Surface quality	better than 20/10 Scratch/Dig per MIL-O-1380A
Parallelism	< 10 arc seconds